Structural engineering of split-gate FET (SG-FET) is carried out to achieve two different homogeneous MoS2-based switching devices, whose SG gap direction are longitudinal (AND-FET) and latitudinal (OR-FET) to the channel direction.

The interfacial shear coupling (ISC) is significant for both the fundamental theory of solid mechanics and stability design of 2D devices. This work studies the ISC of bilayer graphene as a representative of 2D vdW stacks, by substituting one of its layers with the isotope and Raman spectroscopy.